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| 580 Pleasant Street Watertown, MA 02472 Phone:(617) 926-0404 F A X : (617) 924-1235 UPF1N100 * * * * * * * Features Rugged POWERMITE 3 Surface Mount Package Low On-State Resistance Avalanche and Surge Rated High Frequency Switching Ultra Low Leakage current UIS rated Available with Lot Acceptance Testing SURFACE MOUNT N - CHANNEL MOSFET Description This device is an N-Channel enhancement mode, high density MOSFET. It is passivated with 4 um (40 kA) of oxynitride, and supplied in a three leaded package. Maximum Ratings PARAMETER SYMBOL VALUE 1000 Drain-to-Source Voltage VDSS VGS +/- 20 Gate- to -Source Voltage Continuous Drain Current @ TC = 25C ID1 1.0 Continuous Drain Current @ TC=100C ID2 0.27 1.0 Avalanche Current IAR 3.5 Repetitive Avalanche Energy EAR 120 Single Pulse Avalanche Energy EAS Operating & Storage Junction Temperature Range TJ, TSTG - 40 to +125 Steady-state Thermal Resistance, Junction-to-Tab RJ-TAB 2.5 UNIT Volts Volts Amps Amps Amps mJ mJ C C/Watt Static Electrical Characteristics SYMBOL BVDSS VGS(TH)2 VGS(TH)1 RDS(ON)1 RDS(ON)2 RDS(ON)3 RDS(ON)4 RDS(ON)5 IDSS1 IDSS2 IGSS1 IGSS2 IGSS3 CHARACTERISTICS / TEST CONDITIONS Drain to Source Breakdown Voltage (VGS=0V, ID=0.25mA) Gate Threshold Voltage (VGS=VDS, ID=1mA, TJ=37C ) Gate Threshold Voltage (VGS=VDS, ID=1mA, TJ=25C ) Drain to Source ON-State Resistance (VGS=10V, ID=ID 1 , TJ=25C ) Drain to Source ON-State Resistance (VGS=7V, ID=5...150ma, TJ=37C) Drain to Source ON-State Resistance (VGS=7V, ID=5...150ma, TJ=25C) Drain to Source ON-State Resistance (VGS=7V, ID=5...150ma, TJ=60C) Drain to Source ON-State Resistance (VGS=7V, ID=ID 1 , TJ=125C ) Zero Gate Voltage-Drain Current (VDS=80%BVDSS,VGS=0V,TJ= 25C ) Zero Gate Voltage-Drain Current (VDS=80%BVDSS,VGS=0V,TJ=125C ) Gate to Source Leakage Current (VGS= 20V, VDS=0V, TJ = 25C ) Gate to Source Leakage Current (VGS= 20V, VDS=0V, TJ = 37C ) Gate to Source Leakage Current (VGS= 20V, VDS=0V, TJ=125C ) MIN 1000 2 TYP 3.4 3.5 12.5 12.5 11.5 15.0 25.5 MAX UNIT Volts Volts Volts Ohms Ohms Ohms Ohms Ohms uA uA nA nA uA 4.5 13.5 25 250 100 10.0 25 MSC 04-28-00 PRELIMINARY UPF1N100 Dynamic Electrical Characteristics SYMBOL Ciss Coss Crss Qg Qgs Qgd td (on) tr td tf td (on) tr td (off) tf VSD t rr Qrr CHARACTERISTIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge TEST CONDITIONS VGS= 0 V VDS= 25 V f = 1MHZ VGS= 10 V VDS= 0.5 VDSS IC= 20 mA Resistive Switching (25C) VGS= 10 V, VDS= 0.5 BVDSS ID = 20 mA Rg = 1.6 Resistive Switching (25C) VGS= 10 V, VDS= 0.5 BVDSS ID = 100 mA Rg = 1.6 VGS= 0 V, IS = 1 A, TJ = 37C IS = 1 A, dIs/dt = 100 A/us IS = 1 A, dIs/dt = 100 A/us MIN TYP 290 36 15 20 1.0 10 6.3 5.9 315 2.6 6.3 5.8 76 470 0.825 121 0.415 MAX 375 50 30 UNIT pF pF pF nC nC nC ns ns ns us ns ns ns ns V ns uC 1.0 300 0.8 MECHANICAL SPECIFICATIONS MSC 04-28-00 PRELIMINARY |
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